Ag films grown by remote plasma enhanced atomic layer deposition on different substrates

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dc.contributor.authorAmusan, Akinwumi A.
dc.contributor.authorKalkofen, Bodo
dc.contributor.authorGargouri, Hassan
dc.contributor.authorWandel, Klauss
dc.contributor.authorPinnow, Cay
dc.contributor.authorLisker, Marco
dc.contributor.authorBurte, Edmund P.
dc.date.accessioned2019-07-04T11:46:16Z
dc.date.available2019-07-04T11:46:16Z
dc.date.issued2015-11
dc.description.abstractPlasma-assisted atomic layer deposition (PALD) was carried for growing thin boron oxide films onto silicon aiming at the formation of dopant sources for shallow boron doping of silicon by rapid thermal annealing (RTA). A remote capacitively coupled plasma source powered by GaN microwave oscillators was used for generating oxygen plasma in the PALD process with tris(dimethylamido)borane as boron containing precursor. ALD type growth was obtained; growth per cycle was highest with 0.13 nm at room temperature and decreased with higher temperature. The as-deposited films were highly unstable in ambient air and could be protected by capping with in-situ PALD grown antimony oxide films. After 16 weeks of storage in air, degradation of the film stack was observed in an electron microscope. The instability of the boron oxide, caused by moisture uptake, suggests the application of this film for testing moisture barrier properties of capping materials particularly for those grown by ALD. Boron doping of silicon was demonstrated using the uncapped PALD B2O3 films for RTA processes without exposing them to air. The boron concentration in the silicon could be varied depending on the source layer thickness for very thin films, which favors the application of ALD for semiconductor doping processesen_US
dc.description.sponsorshipInvestment Bank Berlin and EFREen_US
dc.identifier.otherDOI:10.1116/1.4936221
dc.identifier.urihttps://avs.scitation.org/doi/10.1116/1.4936221
dc.identifier.urihttp://repository.elizadeuniversity.edu.ng/handle/20.500.12398/264
dc.language.isoenen_US
dc.publisherAmerican Vacuum Societyen_US
dc.subjectPlasma-assisted atomic layer depositionen_US
dc.titleAg films grown by remote plasma enhanced atomic layer deposition on different substratesen_US
dc.typeArticleen_US
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